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| www..com SUP/SUB85N02-03 New Product Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.003 @ VGS = 4.5 V ID (A)a 85 85 85 20 0.0034 @ VGS = 2.5 V 0.0038 @ VGS = 1.8 V TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP85N02-03 SUB85N02-03 DS Top View S www..com Parameter Symbol VDS VGS TC = 25_C TC = 100_C ID IDM IAR N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Limit 20 "8 85 85 240 30 45 250 -55 to 175 mJ W _C A V Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a _ Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipationa Operating Junction and Storage Temperature Range Energyb L = 0.1 mH TC = 25_C EAR PD TJ, Tstg THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction-to-Case Notes: a. See SOA curve for voltage derating. b. Duty cycle v 1%. c. When mounted on 1" square PCB (FR-4 material). Document Number: 71421 S-03181--Rev. A, 05-Mar-01 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 1 www. .com www..com SUP/SUB85N02-03 Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 2 mA VDS = VGS, IDS = 2 mA VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 30 A VGS = 4.5 V, ID = 30 A, TJ = 125_C Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 30 A, TJ = 175_C VGS = 2.5 V, ID = 30 A VGS = 1.8 V, ID = 30 A Forward Transconductancea gfs VDS = 5 V, ID = 30 A 30 0.0027 0.003 120 0.0025 0.003 0.0042 0.005 0.0034 0.0038 S W Symbol Test Condition Min Typ Max Unit 20 V 0.45 "100 1 250 nA mA m A Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss 21250 VGS = 0 V, VDS = 20 V, f = 1 MHz 2350 1520 140 18 24 20 VDD = 10 V, RL = 0.12 W ID ] 85 A, VGEN = 4.5 V, RG = 2.5 W 200 450 320 30 300 670 480 ns 200 nC pF www..com Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = 10 V, VGS = 4.5 V, ID = 85 A Coss Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Pulsed Current Forward Voltagea Reverse Recovery Time ISM VSD trr IF = 100 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 75 240 1.5 150 A V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71421 S-03181--Rev. A, 05-Mar-01 www. .com www..com SUP/SUB85N02-03 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 4.5 thru 2 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 125_C 150 250 TC = -55_C 25_C Vishay Siliconix Transfer Characteristics 150 1.5 V 100 100 50 1, 0.5 V 0 0 2 4 6 8 10 50 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 500 TC = -55_C g fs - Transconductance (S) r DS(on) - On-Resistance ( W ) 400 25_C 0.004 0.005 On-Resistance vs. Drain Current 300 www..com 0.003 125_C 0.002 VGS = 4.5 V 0.001 0.000 0 20 40 60 80 100 120 0 20 40 60 VGS = 1.8 V 200 VGS = 2.5 V 100 0 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 30000 8 Gate Charge 24000 C - Capacitance (pF) Ciss V GS - Gate-to-Source Voltage (V) 6 VDS = 10 V ID = 30 A 18000 4 12000 2 6000 Coss Crss 0 4 8 12 16 20 0 0 0 50 100 150 200 250 VDS - Drain-to-Source Voltage (V) Document Number: 71421 S-03181--Rev. A, 05-Mar-01 Qg - Total Gate Charge (nC) www.vishay.com 3 www. .com www..com SUP/SUB85N02-03 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 1.8 VGS = 4.5 V ID = 30 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 r DS(on) - On-Resistance ( W) (Normalized) 1.2 TJ = 150_C 10 TJ = 25_C 0.9 0.6 0.3 0.0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Drain-Source Voltage Breakdown vs. Junction Temperature 30 ID = 2 mA 28 V(BR)DSS (V) www..com 26 24 22 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71421 S-03181--Rev. A, 05-Mar-01 www. .com www..com SUP/SUB85N02-03 New Product THERMAL RATINGS Maximum Drain Current vs. Case Temperature 100 1000 Limited by rDS(on) 80 100 I D - Drain Current (A) 60 I D - Drain Current (A) 10 ms 100 ms 1 ms 10 10 ms 100 ms dc 1 TC = 25_C Single Pulse Vishay Siliconix Safe Operating Area 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance 0.1 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle = 0.5 0.2 0.1 0.1 www..com 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (sec) 1 10 100 Document Number: 71421 S-03181--Rev. A, 05-Mar-01 www.vishay.com 5 www. .com |
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